| 摘要 |
The present invention provides an oxide film deposition method with which an oxide film can be stably deposited normally without being influenced by atmospheric fluctuations and a low-resistance metal oxide film can be deposited, and which attains a satisfactory film deposition efficiency. In this method, a starting-material solution containing an alkyl compound is ejected in the form of a mist to a substrate (100) in the air. Furthermore, an oxidizing agent having the function of oxidizing the alkyl compound is supplied to the mist of the starting-material solution. By thus treating the substrate, an oxide film is deposited on the substrate. |
