| 摘要 |
<p>An embodiment of the present invention provides a semiconductor device and a manufacturing method thereof capable of enhancing refresh characteristics by reducing a leakage current. The semiconductor device includes: a pillar which is formed on a substrate; and a gate electrode which is formed on the side wall of the pillar. The pillar includes: a source area; a vertical channel area on the source area; a leakage prevention area on the vertical channel area; and a drain area on the leakage prevention area. The present invention reduces a leakage current and improves refresh characteristics by preventing holes from being collected toward the drain area.</p> |
