| 摘要 |
PROBLEM TO BE SOLVED: To form a Ge oxide film on a surface of a Ge substrate without generating an in-film deficit. SOLUTION: In an oxidation furnace 13 of a process system 1 which forms the Ge oxide film on the surface of the Ge substrate 2, the Ge oxide film is formed on the surface of the substrate by supplying an ozone gas from an ozone supply device 11 to the Ge substrate 2 under a pressure of ≤1,000 Pa at a substrate temperature of ≤300°C. At a substrate temperature lower than a room temperature, the ozone gas is supplied to the substrate to form an ozone molecule film on the Ge substrate 2. After the supply of the ozone gas is stopped, the Ge substrate 2 is heated up to the room temperature to oxidize the surface of the substrate through the ozone molecule layer, thereby forming the Ge oxide film. It is preferred that the temperature of the substrate is lowered to a temperature lower than the room temperature by stopping the heating after the Ge substrate 2 reaches the room temperature. Further, an infrared light source is preferably used as a heating source for heating the Ge substrate 2. As for the ozone gas, an ozone concentration is preferably 100%. COPYRIGHT: (C)2011,JPO&INPIT |
