发明名称 |
RESISTANCE-CHANGE MEMORY |
摘要 |
According to one embodiment, a resistance-change memory includes a memory cell and a control circuit. The memory cell comprises first and second electrodes, and a variable resistance layer disposed between the first electrode and the second electrode. The control circuit applies a voltage between the first electrode and the second electrode to perform writing, erasing, and reading. During the writing, the control circuit applies a first voltage pulse between the first electrode and the second electrode, and then applies a second voltage pulse different in polarity from the first voltage pulse after applying the first voltage pulse. |
申请公布号 |
EP2689423(A1) |
申请公布日期 |
2014.01.29 |
申请号 |
EP20110861820 |
申请日期 |
2011.09.16 |
申请人 |
KABUSHIKI KAISHA TOSHIBA, INC. |
发明人 |
ICHIHARA, REIKA;MATSUSHITA, DAISUKE;FUJII, SHOSUKE |
分类号 |
G11C13/00;H01L27/10;H01L27/105;H01L45/00;H01L49/00 |
主分类号 |
G11C13/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|