METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE WITH SIDE CONTACT

摘要

The present invention relates to a method for manufacturing a semiconductor device which can reduce parasitic capacitance between buried bit lines. The method for manufacturing a semiconductor device according to the present invention comprises the following steps of: forming trenches on a semiconductor substrate; forming an insulating layer on side walls and bottoms of the trenches; forming a conductive pattern which buries a part of each trench on the insulating layer; exposing the side walls of each trench by recessing the insulating layer exposed by the conductive pattern; forming a migration assistance layer covering at least the top of the conductive pattern and a surface of the recessed insulating layer; and forming a burying layer which buries the rest part of each trench by a migration process. According to the present invention, when a bit line is formed, the bit line is not buried in a trench between pillars but directly comes into contact with the bottom of the pillar, thereby improving the density of a semiconductor device and reducing parasitic capacitance between adjacent bit lines and a migration process is smoothly performed by forming a migration assistant layer on side walls of trenches, thereby preventing silicon agglomeration.