AN APPARATUS FOR GROWING SILICON SINGLE CRYSTAL AND A METHOD OF GROWING THE SAME

摘要

One embodiment a device for growing monocrystalline silicon comprising: a crucible for holding a silicon melt; a heat shield for surrounding monocrystalline silicon which is grown from the silicon melt; an image photographing part for photographing a shoulder which is grown by a shouldering process, and obtaining an image data according to the photographed result; and a control part for calculating the weight of the shoulder by using the image data, and controlling the raising or lowering of the crucible on the basis of the calculated weight of the shoulder.