HYBRID INTERCONNECT SCHEME AND METHODS FOR FORMING THE SAME

摘要

A device includes a first low-k dielectric layer and a Cu-containing via in the low-k dielectric layer. The device further includes a low-k dielectric layer on the first low-k dielectric layer and an Al-containing metal line on the Cu-containing via electrically connected to the Cu-containing via. The Al-containing metal line is in the second low-k dielectric layer.