MULTI LEVEL ANTI-FUSE MEMORY DEVICE AND METHOD OF OPERATING THE SAME

摘要

An anti-fuse memory device is provided. The anti-fuse memory device comprises an anti-fuse memory cell, a standard current generating unit, and a comparing unit. The anti-fuse memory cell includes an anti-fuse. The standard current generating unit provides one standard current selected among a plurality of standard currents. The comparing unit compares the magnitude of the cell current flowing in the anti-fuse to the magnitude of more than one standard current, and provides an output signal corresponding to the comparison result. [Reference numerals] (110) Voltage generating unit; (120) Row decoder and a word line driver; (130) Column decoder; (140) Standard current generating unit; (150) Comparing unit; (AA) Column direction; (BB) Row direction