| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist material that imparts a resist film having high resolution, low line-edge roughness, and a proper pattern profile, after exposure and showing superior etching durability, particularly, a positive resist material which uses a polymer compound suitable as a base resin for a chemically amplified positive resist material, and to provide a method for forming a pattern. <P>SOLUTION: The positive resist material contains resin as a base resin, in which a hydrogen atom in a carboxy group is substituted by an acid unstable group expressed by formula (1). In formula (1), R<SP>1</SP>and R<SP>2</SP>each represent a hydrogen atom, alkyl group, alkoxy group, alkanoyl group, alkoxycarbonyl group, hydroxy group, nitro group, aryl group, halogen atom or cyano group; R represents a hydrogen atom, alkyl group, alkenyl group, alkynyl group or aryl group; and m and n are integers of 1 to 4. Consequently, the positive resist material has a markedly high contrast in an alkali dissolution rate before and after exposure, high resolution, and a proper pattern profile and preferable edge roughness after exposure, as well as suppresses the acid diffusion rate and exhibits superior etching resistance. <P>COPYRIGHT: (C)2011,JPO&INPIT |
