发明名称 |
Methods and systems for adjusting nvm cell bias conditions for program/erase operations to reduce performance degradation |
摘要 |
Methods and systems are disclosed for adjusting program/erase bias conditions for non-volatile memory (NVM) cells to improve performance and product lifetime of NVM systems. System embodiments include integrated NVM systems (102) having an NVM controller (212), a bias voltage generator (150), and an NVM cell array (204). Further, the NVM systems can store performance degradation information (130) and program/erase bias condition information (132) within storage circuitry. The disclosed embodiments adjust program/erase bias conditions for the NVM cells based upon performance degradation determinations, for example, temperature-based performance degradation determinations and interim verify based performance degradation determinations. |
申请公布号 |
EP2690629(A2) |
申请公布日期 |
2014.01.29 |
申请号 |
EP20130177161 |
申请日期 |
2013.07.19 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
MU, FUCHEN;WANG, YANZHUO;HE, CHEN;EGUCHI, RICHARD K |
分类号 |
G11C16/12;G11C16/34;G11C29/02 |
主分类号 |
G11C16/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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