发明名称 Methods and systems for adjusting nvm cell bias conditions for program/erase operations to reduce performance degradation
摘要 Methods and systems are disclosed for adjusting program/erase bias conditions for non-volatile memory (NVM) cells to improve performance and product lifetime of NVM systems. System embodiments include integrated NVM systems (102) having an NVM controller (212), a bias voltage generator (150), and an NVM cell array (204). Further, the NVM systems can store performance degradation information (130) and program/erase bias condition information (132) within storage circuitry. The disclosed embodiments adjust program/erase bias conditions for the NVM cells based upon performance degradation determinations, for example, temperature-based performance degradation determinations and interim verify based performance degradation determinations.
申请公布号 EP2690629(A2) 申请公布日期 2014.01.29
申请号 EP20130177161 申请日期 2013.07.19
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 MU, FUCHEN;WANG, YANZHUO;HE, CHEN;EGUCHI, RICHARD K
分类号 G11C16/12;G11C16/34;G11C29/02 主分类号 G11C16/12
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