This application relates to graphene based heterostructures and transistor devices comprising graphene. The hetero-structures comprise i) a first graphene layer; ii) a spacer layer and iii) a third graphene. The transistors comprise (i) an electrode, the electrode comprising a graphene layer, and (ii) an insulating barrier layer.
申请公布号
EP2689460(A2)
申请公布日期
2014.01.29
申请号
EP20120714354
申请日期
2012.03.22
申请人
THE UNIVERSITY OF MANCHESTER
发明人
GEIM, A K;NOVOSELOV, K S;GORBACHEV, R V;PONOMARENKO, L A;BRITNELL, L