发明名称
摘要 PROBLEM TO BE SOLVED: To provide means for reducing a peak current at which the current consumption temporarily increases when a semiconductor memory is accessed. SOLUTION: A semiconductor memory 10 comprises a memory cell array 11 and a data mask control part 101. The data mask control part 101 outputs an internal mask signal for controlling data transfer between the memory cell array 11 and a data input/output contact terminal. The data mask control part 101 varies the logical value of a standby state of the internal mask signal according to a default mask signal input from the outside or internally generated. COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP5398664(B2) 申请公布日期 2014.01.29
申请号 JP20100181217 申请日期 2010.08.13
申请人 发明人
分类号 G11C11/401;G11C11/413 主分类号 G11C11/401
代理机构 代理人
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