| 摘要 |
PROBLEM TO BE SOLVED: To achieve a practically sufficient performance index when a thermoelectric conversion element is formed of group III-V compound semiconductor materials. SOLUTION: The thermoelectric conversion element includes an n-type laminate structure 2 including a first n-type semiconductor layer 7 formed of a first group III-V compound semiconductor material and a second n-type semiconductor layer 8 formed of a second group III-V compound semiconductor material different from the first group III-V compound semiconductor material, a p-type laminate structure 3 including a first p-type semiconductor layer 12 formed of a third group III-V compound semiconductor material and a second p-type semiconductor layer 13 formed of a fourth group III-V compound semiconductor material different from the third group III-V compound semiconductor material, and electrodes 5 and 6 connecting the n-type laminate structure 2 and p-type laminate structure 3 electrically in series, wherein the first n-type semiconductor layer 7 and second n-type semiconductor layer 8 are constituted so that a band offset of a conduction band is flat, and the first p-type semiconductor layer 12 and second p-type semiconductor layer 13 are constituted so that a band offset of a valence band is flat. COPYRIGHT: (C)2011,JPO&INPIT |
