发明名称
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of securely suppressing a peak current without depending upon a pattern of write data. <P>SOLUTION: A plurality of memory cells store a plurality of pieces of data of (i) levels (i: a natural number equal to or larger than 1) which are levels "0", "1", ..., "(i-1)". A control part writes data to (n) cells (n: a natural number equal to or larger than 1) of the plurality of memory cells at the same time. The control part performs writing operation and writing verifying operation when writing the data to the (n) memory cells. If writing to (m) (m≤n) cells as objects of simultaneous writing is not performed in the writing verifying operation, the writing operation and writing verifying operation are repeated, and writing only to a write cell of low level is performed in the beginning of the repeating operation. <P>COPYRIGHT: (C)2012,JPO&INPIT</p>
申请公布号 JP5398872(B2) 申请公布日期 2014.01.29
申请号 JP20120104037 申请日期 2012.04.27
申请人 发明人
分类号 G11C16/02;G11C16/04;G11C16/06 主分类号 G11C16/02
代理机构 代理人
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