ELECTRODE COATING MATERIAL, ELECTRODE STRUCTURE AND SEMICONDUCTOR DEVICE

摘要

A semiconductor device is composed of a filed effect transistor having a gate electrode (13), a gate insulating layer (14), a channel forming region (16) composed of an organic semiconductor material layer and a source/drain electrode (15) made of a metal. A portion of the source/drain electrode (15) in contact with the organic semiconductor material layer constituting the channel forming region (16) is covered with an electrode coating material (21). Since the electrode coating material (21) is composed of organic molecules having a functional group which can be bound to a metal ion and a functional group that binds to the source/drain electrode (15) composed of the metal, low contact resistance and high mobility can be achieved.