NON VOLATILE MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME

摘要

According to the present invention, a nonvolatile memory device includes device isolation patterns defining active parts extended in a second direction vertical to a first direction and separated in the first direction in a substrate; a gate structure extended in the first direction and separated in the second direction on the substrate. From a cross-sectional point according to the second direction, the device isolation patterns include a first air gap. The upper and the lower surface of the air gap are sinuous.