| 摘要 |
The subject of the invention is an RF component, comprising at least one coplanar RF stripline (Ls), with a metal area (M1, M2) on the surface of a substrate (S), and a nanoswitching structure located between said coplanar stripline and the metal area, the RF stripline and the metal area lying parallel to each other along a first direction, and the RF stripline and the metal area comprising lateral elements (Lsb1, Lsb2, Mb11, Mb12, Mb21, Mb22) lying perpendicular to said first direction, characterized in that: one lateral element (Lsb1, Lsb2) of the RF stripline interacts with at least one lateral metal-area element (Mb11, Mb12, Mb21, Mb22), which comprises a series of nanotubes or nanowires (Nb11i, Nb12i), via a switching action that brings the series of nanotubes or nanowires into direct contact with the lateral element of said RF stripline; and, said nanoswitching structure furthermore comprises at least one switching electrode on the surface of said substrate, making it possible for said series of nanotubes or nanowires to be brought into contact with said lateral element of said RF stripline. |
