Method for selective deposition of a semiconductor material

摘要

A method for selective deposition of semiconductor materials in semiconductor processing includes providing a patterned substrate (10) comprising a first region (11) and a second region (12), where the first region (11) comprises an exposed first semiconductor material and the second region (12) comprise an exposed insulator material. The method further includes selectively providing a film of the second semiconductor material on the first semiconductor material of the first region by providing a precursor of a second semiconductor material, a carrier gas that is not reactive with Cl components, and tin-tetrachloride (SnCl 4 ). The tin-tetrachloride inhibits the deposition of the second semiconductor material on the insulator material of the second region.