发明名称 NONVOLATILE MEMORY AND WRITING METHOD THEREOF, AND SEMICONDUCTOR DEVICE
摘要 A write-once memory can be written only once to each memory cell; therefore, a defective bit cannot be detected by an actual inspection of writing. Accordingly, as described above, the measures, in which a redundant circuit is provided and the defective bit is modified before shipping, cannot be taken; thus, it is difficult to provide a memory with few defects. The purpose of the present invention is to provide a write-once memory where the probability of a defect is reduced considerably. A nonvolatile memory that can be written only once includes a redundant memory cell, a first circuit which allocates an address to the redundant memory cell, a second circuit which outputs a determination signal indicative of whether writing is performed normally, and a third circuit to which the determination signal is inputted and which controls the first circuit and the second circuit. [Reference numerals] (AA) Determination signal
申请公布号 KR20140012203(A) 申请公布日期 2014.01.29
申请号 KR20140002435 申请日期 2014.01.08
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 KATO KIYOSHI
分类号 G11C17/18;H01L29/786 主分类号 G11C17/18
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