VERTICAL MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME

摘要

In a method for manufacturing a vertical memory device, sacrificial layers and insulating layers are formed on a substrate. The sacrificial layers and the insulating layers are partially etched to form an opening part for exposing the surface of a substrate. A charge trapping layer and a tunnel insulating layer are formed in the sidewall of the opening part. A channel layer including N-type-impurity-doped polysilicon is formed along the inner wall profile of the opening part on the tunnel insulating layer. A burying insulating pattern is formed at the opening part formed in the channel layer. Also, a blocking dielectric layer and a control gate are formed on the charge trapping layer of one sidewall of the channel layer.