发明名称 POWER SEMICONDUCTOR MODULE AND POWER UNIT DEVICE
摘要 A power semiconductor module includes: a plurality of first metal plates arranged in the same planar state; a power semiconductor chip mounted on the first metal plate; and an overbridge-shaped second metal plate which is composed of bridge frame sections and leg sections that support the bridge frame sections, the leg sections being for appropriately performing solder bonding between electrodes of the power semiconductor chips and between the electrode of the power semiconductor chip and the first metal plate, the power semiconductor module being configured by a resin package in which these members are sealed with electrically insulating resin. In the power semiconductor module, the solder bonding section of the leg section is formed in a planar shape by bending process and is provided at a position lower than the bridge frame section.
申请公布号 EP2690658(A1) 申请公布日期 2014.01.29
申请号 EP20110861840 申请日期 2011.04.27
申请人 MITSUBISHI ELECTRIC CORPORATION 发明人 OMAE, KATSUHIKO;WATANABE, MAMORU;WATANABA, TETSUSHI;ASA, YOSHIHITO
分类号 H01L25/07;H01L21/60;H01L23/28;H01L23/31;H01L23/34;H01L23/48;H01L23/495;H01L25/18 主分类号 H01L25/07
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