发明名称 |
METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION DEVICE |
摘要 |
<p>This method for producing a photoelectric conversion device has: a step for forming each of an IN layer and an IP layer on one surface of an n-type monocrystalline silicon substrate; and a step of forming an n-side electrode and a p-side electrode, each including a plurality of conductor layers. Also, the step for forming the electrodes includes: a first step for forming a first conductive layer on the IN layer and the IP layer; a second step for forming a second conductive layer on the portion of the first conductive layer that covers the IN layer, and a second conductive layer on the portion of the first conductive layer that covers the IP layer; and a third step for forming a first conductive layer and a first conductive layer by partially etching the first conductive layer after completing the second step.</p> |
申请公布号 |
EP2690667(A1) |
申请公布日期 |
2014.01.29 |
申请号 |
EP20120764781 |
申请日期 |
2012.03.09 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
GOTO, RYO;SHIMADA, SATORU;SHIGEMATSU, MASATO;SAKATA, HITOSHI;IDE, DAISUKE |
分类号 |
H01L31/04;H01L31/0224;H01L31/0747;H01L33/00 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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