发明名称 |
Self-aligned carbon electronics with embedded gate electrode |
摘要 |
A device and method for device fabrication includes forming (202) a buried gate electrode in a dielectric substrate and patterning (212) a stack comprising a high dielectric constant layer, a carbon-based semi-conductive layer and a protection layer over the buried gate electrode. An isolation dielectric layer formed over the stack is opened (216) to define recesses in regions adjacent to the stack. The recesses are etched (218) to form cavities and remove a portion of the high dielectric constant layer to expose the carbon-based semi- conductive layer on opposite sides of the buried gate electrode. A conductive material is deposited (224) in the cavities to form self-aligned source and drain regions. |
申请公布号 |
GB2504434(A) |
申请公布日期 |
2014.01.29 |
申请号 |
GB20130020100 |
申请日期 |
2012.05.18 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DECHAO GUO;SHU-JEN HAN;KEITH KWONG HON WONG;JUN YUAN |
分类号 |
H01L27/108;H01L29/417;H01L29/423;H01L29/66;H01L29/786;H01L51/05 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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