发明名称 Adder including transistor having oxide semiconductor layer
摘要 A circuit in which a storage function and an arithmetic function are combined is proposed by using a transistor with low off-state current for forming a storage element. When the transistor with low off-state current is used, electric charge can be held, for example, in a node or the like between a source or a drain of the transistor with low off-state current and a gate of another transistor. Thus, the node or the like between one of the source or the drain of the transistor with low off-state current and the gate of the another transistor can be used as a storage element. In addition, leakage current accompanied by the operation of an adder can be reduced considerably. Accordingly, a signal processing circuit consuming less power can be formed.
申请公布号 US8638123(B2) 申请公布日期 2014.01.28
申请号 US201213472733 申请日期 2012.05.16
申请人 OHNUKI TATSUYA;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 OHNUKI TATSUYA
分类号 H03K19/094;H03K17/00 主分类号 H03K19/094
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