发明名称 |
Nonvolatile semiconductor memory |
摘要 |
A nonvolatile semiconductor memory includes first and second memory cells having a floating gate and a control gate. The floating gate of the first and second memory cells is comprised a first part, and a second part arranged on the first part, and a width of the second part in an extending direction of the control gate is narrower than that of the first part. A first space between the first parts of the first and second memory cells is filled with one kind of an insulator. The control gate is arranged at a second space between the second parts of the first and second memory cells. |
申请公布号 |
US8637915(B2) |
申请公布日期 |
2014.01.28 |
申请号 |
US201113007258 |
申请日期 |
2011.01.14 |
申请人 |
ICHIGE MASAYUKI;ARAI FUMITAKA;SHIROTA RIICHIRO;YAEGASHI TOSHITAKE;OZAWA YOSHIO;YAMAMOTO AKIHITO;MIZUSHIMA ICHIRO;SAITO YOSHIHIKO;KABUSHIKI KAISHA TOSHIBA |
发明人 |
ICHIGE MASAYUKI;ARAI FUMITAKA;SHIROTA RIICHIRO;YAEGASHI TOSHITAKE;OZAWA YOSHIO;YAMAMOTO AKIHITO;MIZUSHIMA ICHIRO;SAITO YOSHIHIKO |
分类号 |
H01L29/788 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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