| 摘要 |
A high-performance semiconductor device capable of suppressing a leak current with little electric field concentration, reducing an invalid region in a PN junction region, securing a sufficient area for a Schottky junction region, and achieving efficient and easy manufacturing, in which, in one surface of a semiconductor substrate (1) having a first conduction type made of SiC, a PN junction region (7a) and a Schottky junction region (7b) are provided, in the PN junction region (7a), a convex portion (2a) which has a trapezoidal shape in sectional view and includes a second conduction type layer (2) provided on the semiconductor substrate (1) and a contact layer (3) which is in ohmic contact with the second conduction type layer (2) of the convex portion (2a) are provided, and Schottky electrode (4) covers the side surface of the convex portion (2a) and the contact layer (3), and is provided continuously over the PN junction region (7a) and the Schottky junction region (7b). |
