发明名称 |
Semiconductor device for DC-DC converter including high side and low side semiconductor switches |
摘要 |
In a non-isolated DC/DC converter, a reference potential for a low-side pre-driver which drives a gate of a low-side MOSFET is applied from a portion except for a main circuit passing through a high-side MOSFET and the low-side MOSFET so that a parasitic inductance between a source of the low-side MOSFET and the pre-driver is increased without increasing the sum of parasitic inductances in the main circuit and negative potential driving of the gate of the low-side MOSFET can be performed and a self turn-on phenomenon can be prevented without adding any member and changing drive system. |
申请公布号 |
US8638577(B2) |
申请公布日期 |
2014.01.28 |
申请号 |
US201113230947 |
申请日期 |
2011.09.13 |
申请人 |
SHIRAISHI MASAKI;HASHIMOTO TAKAYUKI;AKIYAMA NOBORU;RENESAS ELECTRONICS CORPORATION |
发明人 |
SHIRAISHI MASAKI;HASHIMOTO TAKAYUKI;AKIYAMA NOBORU |
分类号 |
H02M1/38;H02M3/155 |
主分类号 |
H02M1/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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