发明名称 Semiconductor device for DC-DC converter including high side and low side semiconductor switches
摘要 In a non-isolated DC/DC converter, a reference potential for a low-side pre-driver which drives a gate of a low-side MOSFET is applied from a portion except for a main circuit passing through a high-side MOSFET and the low-side MOSFET so that a parasitic inductance between a source of the low-side MOSFET and the pre-driver is increased without increasing the sum of parasitic inductances in the main circuit and negative potential driving of the gate of the low-side MOSFET can be performed and a self turn-on phenomenon can be prevented without adding any member and changing drive system.
申请公布号 US8638577(B2) 申请公布日期 2014.01.28
申请号 US201113230947 申请日期 2011.09.13
申请人 SHIRAISHI MASAKI;HASHIMOTO TAKAYUKI;AKIYAMA NOBORU;RENESAS ELECTRONICS CORPORATION 发明人 SHIRAISHI MASAKI;HASHIMOTO TAKAYUKI;AKIYAMA NOBORU
分类号 H02M1/38;H02M3/155 主分类号 H02M1/38
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