发明名称 |
Methods of forming fine patterns in semiconductor devices |
摘要 |
Methods of forming a semiconductor device may include providing a feature layer having a first region and a second region. The methods may also include forming a dual mask layer on the feature layer. The methods may further include forming a variable mask layer on the dual mask layer. The methods may additionally include forming a first structure on the feature layer in the first region and a second structure on the feature layer in the second region by patterning the variable mask layer and the dual mask layer. The methods may also include forming a first spacer on a sidewall of the first structure and a second spacer on a sidewall of the second structure. The methods may further include removing the first structure while maintaining at least a portion of the second structure. |
申请公布号 |
US8637407(B2) |
申请公布日期 |
2014.01.28 |
申请号 |
US201113242504 |
申请日期 |
2011.09.23 |
申请人 |
MIN JAE-HO;KWON O-IK;KIM BUM-SOO;KIM DONG-CHAN;KIM MYEONG-CHEOL;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
MIN JAE-HO;KWON O-IK;KIM BUM-SOO;KIM DONG-CHAN;KIM MYEONG-CHEOL |
分类号 |
H01L21/302;H01L21/461 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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