发明名称 Device housing and method for making the same
摘要 A device housing is provided. The device housing includes a substrate, a silicon dioxide film formed on the substrate, and a zinc oxide film formed on the silicon dioxide film. The silicon dioxide film has micrometer sized structures. The zinc oxide film has nanometer sized structures. A method for making the device housing is also described there.
申请公布号 US8637862(B2) 申请公布日期 2014.01.28
申请号 US201113087512 申请日期 2011.04.15
申请人 CHANG HSIN-PEI;CHEN WEN-RONG;CHIANG HUANN-WU;CHEN CHENG-SHI;WANG YING-YING;HONG FU JIN PRECISION INDUSTRY (SHENZHEN) CO., LTD;HON HAI PRECISION INDUSTRY CO., LTD. 发明人 CHANG HSIN-PEI;CHEN WEN-RONG;CHIANG HUANN-WU;CHEN CHENG-SHI;WANG YING-YING
分类号 H01L29/10 主分类号 H01L29/10
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