发明名称 |
Nonvolatile memory device |
摘要 |
A nonvolatile memory device includes a channel protruding in a vertical direction from a substrate, a plurality of interlayer dielectric layers and gate electrode layers which are alternately stacked over the substrate along the channel, and a memory layer formed between the channel and a stacked structure of the interlayer dielectric layers and gate electrode layers. Two or more gate electrode layers of the plurality of gate electrode layers are coupled to an interconnection line to form a selection transistor. |
申请公布号 |
US8637919(B2) |
申请公布日期 |
2014.01.28 |
申请号 |
US201113310329 |
申请日期 |
2011.12.02 |
申请人 |
LEE KI-HONG;HONG KWON;KIM BEOM-YONG;HYNIX SEMICONDUCTOR INC. |
发明人 |
LEE KI-HONG;HONG KWON;KIM BEOM-YONG |
分类号 |
H01L29/792;H01L21/336 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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