INTEGRATED CIRCUIT DEVICE HAVING THROUGH SILICON VIA STRUCTURE AND METHOD OF MANUFACTURING THE SAME
摘要
An integrated circuit device includes a through silicon via (TSV) penetrating a semiconductor structure. The TSV structure includes a first through electrode part containing impurities with first concentration and a second through electrode part containing impurities with second concentration that is greater than the first concentration.
申请公布号
KR20140011137(A)
申请公布日期
2014.01.28
申请号
KR20120077920
申请日期
2012.07.17
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
LEE, DO SUN;PARK, KUN SANG;PARK, BYUNG LYUL;SON, SEONG MIN;CHOI, GIL HEYUN