Disturb verify for programming memory cells

摘要

Apparatuses and methods for disturb verify for programming operations are described. Programming memory cells can include applying a number of programming pulses to a first memory cell, performing a disturb verify operation on a second memory cell adjacent to the first memory cell, and inhibiting the first memory cell from further programming in response to the second memory cell failing the disturb verify operation. Other apparatuses and methods are also disclosed.