发明名称 |
3D integrated circuit system with connecting via structure and method for forming the same |
摘要 |
A method of forming an integrated circuit device includes providing a substrate including an active device, forming a through silicon via into the substrate, forming a device contact to the active device, forming a conductive layer over the through silicon via and the device contact, and forming a connecting via structure for electrically connecting the conductive layer with the through silicon via. An integrated circuit device includes a through silicon via formed into a substrate silicon material, a conductive layer formed over the through silicon via, and a connecting via structure formed between the conductive layer and the through silicon via for electrically connecting the conductive layer with the through silicon via. The connecting via structure comprises a first series of via bars intersected with a second series of via bars. |
申请公布号 |
US8637993(B2) |
申请公布日期 |
2014.01.28 |
申请号 |
US201213453043 |
申请日期 |
2012.04.23 |
申请人 |
WONG CHUN YU;ALAPATI RAMAKANTH;TANG TECK JUNG;GLOBALFOUNDRIES, INC. |
发明人 |
WONG CHUN YU;ALAPATI RAMAKANTH;TANG TECK JUNG |
分类号 |
H01L23/48;H01L23/52;H01L29/10 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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