发明名称 Semiconductor device and method of fabricating the same semiconductor
摘要 An exemplary semiconductor device includes a semiconductor substrate on which lower electrodes are formed. The lower electrodes are arranged in an array including a rows extending substantially parallel to one another along a first direction. A stripe-shaped capacitor support pad is interposed between a pair of adjacent ones of the rows and is connected to lower electrodes in the pair of adjacent ones of the rows. The semiconductor device may include plurality of capacitors each including a one of the lower electrodes, a dielectric film, and an upper electrode. An upper end of the capacitor support pad is below the upper ends of the lower electrodes. A portion of the stripe-shaped capacitor support pad is interposed between adjacent ones of lower electrodes included within at least one of the rows and is connected to the adjacent ones of lower electrodes included within the at least one of the rows.
申请公布号 KR101357303(B1) 申请公布日期 2014.01.28
申请号 KR20070069351 申请日期 2007.07.10
申请人 发明人
分类号 H01L21/8242;H01L27/108 主分类号 H01L21/8242
代理机构 代理人
主权项
地址