发明名称 |
Semiconductor devices and methods of forming the same |
摘要 |
Semiconductor devices and methods of forming the same may be provided. The semiconductor devices may include a trench in a substrate. The semiconductor devices may also include a bulk electrode within opposing sidewalls of the trench. The semiconductor devices may further include a liner electrode between the bulk electrode and the opposing sidewalls of the trench. The liner electrode may include a sidewall portion between a sidewall of the bulk electrode and one of the opposing sidewalls of the trench. |
申请公布号 |
US8637927(B2) |
申请公布日期 |
2014.01.28 |
申请号 |
US201113267267 |
申请日期 |
2011.10.06 |
申请人 |
HWANG HEEDON;MIN JI-YOUNG;PARK JONGCHUL;JEON INSANG;SHIM WOOGWAN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HWANG HEEDON;MIN JI-YOUNG;PARK JONGCHUL;JEON INSANG;SHIM WOOGWAN |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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