发明名称 |
Transistor having oxide semiconductor with electrode facing its side surface |
摘要 |
Provided is a semiconductor device for high power application including a novel semiconductor material with high productivity. Alternatively, provided is a semiconductor device having a novel structure in which the novel semiconductor material is used. Provided is a vertical transistor including a channel formation region formed using an oxide semiconductor which has a wider band gap than a silicon semiconductor and is an intrinsic semiconductor or a substantially intrinsic semiconductor with impurities that serve as electron donors (donors) in the oxide semiconductor removed. The thickness of the oxide semiconductor is greater than or equal to 1 micrometer, preferably greater than 3 micrometer, more preferably greater than or equal to 10 micrometer. |
申请公布号 |
US8637861(B2) |
申请公布日期 |
2014.01.28 |
申请号 |
US20100948969 |
申请日期 |
2010.11.18 |
申请人 |
YAMAZAKI SHUNPEI;KAWAE DAISUKE;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;KAWAE DAISUKE |
分类号 |
H01L29/10;H01L21/00;H01L21/16;H01L29/12 |
主分类号 |
H01L29/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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