发明名称 |
Methods for fabricating a FINFET integrated circuit on a bulk silicon substrate |
摘要 |
Methods are provided for fabricating a FINFET integrated circuit that includes epitaxially growing a first silicon germanium layer and a second silicon layer overlying a silicon substrate. The second silicon layer is etched to form a silicon fin using the first silicon germanium layer as an etch stop. The first silicon germanium layer underlying the fin is removed to form a void underlying the fin and the void is filled with an insulating material. A gate structure is then formed overlying the fin. |
申请公布号 |
US8637372(B2) |
申请公布日期 |
2014.01.28 |
申请号 |
US201113172635 |
申请日期 |
2011.06.29 |
申请人 |
LIU YANXIANG;YANG XIAODONG;LIU JINPING;GLOBALFOUNDRIES, INC. |
发明人 |
LIU YANXIANG;YANG XIAODONG;LIU JINPING |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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