MEMORY ELEMENT AND PROGRAMMABLE LOGIC DEVICE

摘要

The present invention is to provide a memory element for maintaining desired potential as data without increasing the number of power potential. A memory device maintains the data in a node which is in a floating state by the off of a transistor with a channel formed in an oxide semiconductor layer. The potential of the gate of the transistor is increased by the capacitive coupling between a gate and a source. Therefore, a desired potential can be maintained as data without increasing the number of power potentials.