发明名称 Stable temp. compensated RC thin film circuit mfr. - from aluminium and tantalum alloy by reactive atomisation in atmos. contg. carbon dioxide
摘要 <p>In the prodn. of stable, temp.-compensated RC thin film circuits from a common base film of an Al-Ta alloy, which is applied to an insulating substrate in vacuo contains 2-20, esp. 10-18 at.-% Ta in the Al, teh improvement comrpises reactive atomisation of the film of an atmos. with CO2 and selection of the compsn. of the film and the CO2 partial pressure so that the temp. coeffts. of capacitance and resistance are in the range from +200 to +500 and -200 to - 500 ppm/k respectively and compensate one another. The laims also cover the prodn. of discrete condensers. Temp. compensated RC thin film circuits and discrete resistors and capacitors of high stability cna be produced, in which the temp. coeffts. of resistivity can be regulated within wide limits.</p>
申请公布号 DE2520790(A1) 申请公布日期 1976.11.18
申请号 DE19752520790 申请日期 1975.05.09
申请人 SIEMENS AG 发明人 KAUSCHE,HELMHOLD,DIPL.-PHYS.;JUERGENS,WILFRIED,DIPL.-PHYS.
分类号 H01L21/70;(IPC1-7):H01L49/02;H01G4/10 主分类号 H01L21/70
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