发明名称 |
Method of processing silicon and glass substrates using a laser peeling technique |
摘要 |
According to one embodiment, a method of manufacturing a semiconductor device including forming a metal film on aback surface of a glass substrate which supports a semiconductor substrate on a front surface thereof; forming a metal oxide film by oxidizing the whole or at least a portion of the metal film from the front surface; forming protective film, such as silicon nitride, on the metal oxide film; holding the front surface of the protective film with an electrostatic chuck; and forming a via for electrical connection in the semiconductor substrate while the front surface of the protective film is in contact with by the electrostatic chuck; then using a laser to delaminate the glass substrate from the semiconductor substrate. |
申请公布号 |
US8637380(B2) |
申请公布日期 |
2014.01.28 |
申请号 |
US201213607381 |
申请日期 |
2012.09.07 |
申请人 |
SAKATA ATSUKO;HIGASHI KAZUYUKI;NOMACHI AKIKO;ISHIZAKI TAKESHI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
SAKATA ATSUKO;HIGASHI KAZUYUKI;NOMACHI AKIKO;ISHIZAKI TAKESHI |
分类号 |
H01L21/30;H01L21/44 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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