发明名称 Word line decoder circuit apparatus and method
摘要 One embodiment of the technology is an apparatus, a memory integrated circuit. The memory integrated circuit has word line address decoding circuitry. The circuit allows selection of a single word line to have an erase voltage. A decoder circuit includes an inverter and logic. The inverter has an input, and an output controlling a word line to perform the erase operation. A voltage range of the input extends between a first voltage reference and a second voltage reference. Examples of voltages references are a voltage supply and a ground. In some embodiments, this wide voltage range results from the input being free of a threshold voltage drop from preceding circuitry limiting the voltage range of the input. The logic of the decoder is circuit is controlled by a word line address to determine a value of the input of the inverter during the erase operation.
申请公布号 US8638636(B2) 申请公布日期 2014.01.28
申请号 US20100816960 申请日期 2010.06.16
申请人 SHEN SHIN-JANG;WU BO-CHANG;YU CHUAN YING;CHEN KEN-HUI;CHANG KUEN-LONG;HUNG CHUN-HSIUNG;MACRONIX INTERNATIONAL CO., LTD. 发明人 SHEN SHIN-JANG;WU BO-CHANG;YU CHUAN YING;CHEN KEN-HUI;CHANG KUEN-LONG;HUNG CHUN-HSIUNG
分类号 G11C8/00 主分类号 G11C8/00
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