| 摘要 |
There is provided a semiconductor device comprising, a first metal pattern formed at a first metal level and extending in a first direction, a second metal pattern formed at the first metal level, extending in a second direction that is different than the first direction, and disposed on a side of the first metal pattern to be separated from the first metal pattern, a first via structure formed on the first metal pattern, a third metal pattern formed at a second metal level that is different than the first metal level and electrically connected to the first metal pattern by the first via structure, and a first pad electrically connected to the first metal pattern and a second pad electrically connected to the third metal pattern. |
