发明名称 Capacitors and methods with praseodymium oxide insulators
摘要 Methods of forming and the resulting capacitors formed by these methods are shown. Monolayers that contain praseodymium are deposited onto a substrate and subsequently processed to form praseodymium oxide dielectrics. Monolayers that contain titanium or other metals are deposited onto a substrate and subsequently processed to form metal electrodes. Resulting capacitor structures includes properties such as improved dimensional control. One improved dimensional control includes thickness. Some resulting capacitor structures also include properties such as an amorphous or nanocrystalline microstructure. Selected components of capacitors formed with these methods have better step coverage over substrate topography and more robust film mechanical properties.
申请公布号 US8637377(B2) 申请公布日期 2014.01.28
申请号 US20100946620 申请日期 2010.11.15
申请人 AHN KIE Y.;FORBES LEONARD;BHATTACHARYYA ARUP;MICRON TECHNOLOGY, INC. 发明人 AHN KIE Y.;FORBES LEONARD;BHATTACHARYYA ARUP
分类号 H01L21/20 主分类号 H01L21/20
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