发明名称 |
Methods of forming a non-volatile resistive oxide memory array |
摘要 |
A method of forming a non-volatile resistive oxide memory array includes forming a plurality of one of conductive word lines or conductive bit lines over a substrate. Metal oxide-comprising material is formed over the plurality of said one of the word lines or bit lines. A series of elongated trenches is provided over the plurality of said one of the word lines or bit lines. A plurality of self-assembled block copolymer lines is formed within individual of the trenches in registered alignment with and between the trench sidewalls. A plurality of the other of conductive word lines or conductive bit lines is provided from said plurality of self-assembled block copolymer lines to form individually programmable junctions comprising said metal oxide-comprising material where the word lines and bit lines cross one another. |
申请公布号 |
US8637113(B2) |
申请公布日期 |
2014.01.28 |
申请号 |
US201213354163 |
申请日期 |
2012.01.19 |
申请人 |
SANDHU GURTEJ;SMYTHE JOHN;SRINIVASAN BHASKAR;MICRON TECHNOLOGY, INC. |
发明人 |
SANDHU GURTEJ;SMYTHE JOHN;SRINIVASAN BHASKAR |
分类号 |
C23C18/00;C23C20/00;C23C28/00;C23C30/00;H01C17/06 |
主分类号 |
C23C18/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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