发明名称 |
Nonvolatile resistive memory element with a passivated switching layer |
摘要 |
A nonvolatile resistive memory element has a novel variable resistance layer that is passivated with non-metallic dopant atoms, such as nitrogen, either during or after deposition of the switching layer. The presence of the non-metallic dopant atoms in the variable resistance layer enables the switching layer to operate with reduced switching current while maintaining improved data retention properties. |
申请公布号 |
US8637413(B2) |
申请公布日期 |
2014.01.28 |
申请号 |
US201113309813 |
申请日期 |
2011.12.02 |
申请人 |
CHEN CHARLENE;PRAMANIK DIPANKAR;SANDISK 3D LLC;KABUSHIKI KAISHA TOSHIBA |
发明人 |
CHEN CHARLENE;PRAMANIK DIPANKAR |
分类号 |
H01L21/31;G11C11/00;H01L29/00 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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