| 摘要 |
The object is to provide an etching liquid for a conductive polymer having excellent etching capability toward a conductive polymer, and a method for patterning a conductive polymer employing the etching liquid for a conductive polymer. The conductive etching liquid of the present invention is selected from the group consisting of (1) an etching liquid comprising greater than 0.5 wt % but no greater than 70 wt % of (NH 4 ) 2 Ce(NO 3 ) 6 or at least 0.5 wt % but no greater than 30 wt % of Ce(SO 4 ) 2 , (2) an etching liquid comprising greater than 0.5 wt % but no greater than 30 wt % of (NH 4 ) 4 Ce(SO 4 ) 4 , (3) an etching liquid comprising a hypochlorous acid salt aqueous solution having an effective chlorine concentration of at least 0.06 wt % and a pH of greater than 3 but less than 8, (4) an etching liquid comprising nitrosyl chloride which comprises at least 5 wt % of hydrochloric acid and at least 20 wt % of nitric acid, a (hydrochloric acid concentration + 0.51 x nitric acid concentration) value being no greater than 35 wt %, and a (hydrochloric acid concentration + 0.5 x nitric acid concentration) value being at least 30 wt %, (5) an etching liquid comprising at least 3 wt % but no greater than 40 wt % of a bromic acid compound and at least 4 wt % of an inorganic acid, (6) an etching liquid comprising at least 6 wt % but no greater than 40 wt % of a chloric acid compound and at least 7 wt % of a hydrogen halide, (7) an etching liquid comprising at least 0.001 wt % but no greater than 20 wt % of a permanganic acid compound, and (8) an etching liquid comprising at least 3 wt % but no greater than 30 wt % of a hexavalent chromium compound. |
