发明名称 |
Semiconductor nanostructures, semiconductor devices, and methods of making same |
摘要 |
A semiconductor structure is provided, which includes multiple sections arranged along a longitudinal axis. Preferably, the semiconductor structure comprises a middle section and two terminal sections located at opposite ends of the middle section. A semiconductor core having a first dopant concentration preferably extends along the longitudinal axis through the middle section and the two terminal sections. A semiconductor shell having a second, higher dopant concentration preferably encircles a portion of the semiconductor core at the two terminal sections, but not at the middle section, of the semiconductor structure. It is particularly preferred that the semiconductor structure is a nanostructure having a cross-sectional dimension of not more than 100 nm. |
申请公布号 |
US8637361(B2) |
申请公布日期 |
2014.01.28 |
申请号 |
US201113041740 |
申请日期 |
2011.03.07 |
申请人 |
APPENZELLER JOERG;GUHA SUPRATIK;TUTUC EMANUEL;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
APPENZELLER JOERG;GUHA SUPRATIK;TUTUC EMANUEL |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|