发明名称 PASTE-ON SEMICONDUCTOR STRAIN GAGE
摘要 FIELD: instrumentation.SUBSTANCE: strain gage comprises carrier composed of metal foil in the form of thread with sites at its ends, polymer substrate formed at carrier one side, dielectric film and strain-sensitive film from polycrystalline samarium polysulfide arranged at opposite aside, as metal film applied on said strain-sensitive film. Carrier thread ends are shaped to bracket element with its ends connected to center of sides of aforesaid sites. Or carrier thread has crosswise strips at its ends. Dielectric and strain-sensitive films follow the carrier shape. Aforesaid metal film acts as electric contacts and, also, follows the carrier shape but with a break it its center.EFFECT: higher precision of measurements.2 cl, 7 dwg
申请公布号 RU2505782(C1) 申请公布日期 2014.01.27
申请号 RU20120135654 申请日期 2012.08.21
申请人 FEDERAL'NOE GOSUDARSTVENNOE UNITARNOE PREDPRIJATIE "NAUCHNO-PROIZVODSTVENNOE OB"EDINENIE IM. S.A. LAVOCHKINA" 发明人 VOLODIN NIKOLAJ MIKHAJLOVICH
分类号 G01B7/16 主分类号 G01B7/16
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