<p>Disclosed is a method for manufacturing single layer graphene on a silicon carbide wafer. The disclosed manufacturing method comprises the steps of: forming multiple graphene layers on an SiC wafer; removing multiple graphene layers from a buffer layer, which is the uppermost layer of the SiC wafer and is composed of carbon; and converting the buffer layer into the single layer graphene. [Reference numerals] (S110) Prepare SiC wafer; (S120) Form multiple graphene layers on the SiC wafer; (S130) Remove the multiple graphene layers from a buffer layer composed of carbon which is the uppermost layer of the SiC wafer; (S140) Convert the buffer layer to the graphene layer</p>
