| 摘要 |
<p>The present invention relates to a vertically stacked ReRAM device capable of improving the switching uniformity of a resistance change material layer and a method for manufacturing the same. In a vertically stacked ReRAM where the resistance change material in a crossing point of a horizontal electrodes that is stacked between insulating layers and extended in a horizontal direction, and a vertical electrode extended in a vertical direction, a lightning rod shape where the horizontal electrodes are laminated is formed by using conductive materials of different selective etching rate.</p> |
